2.6g 50w功放设计的规格书及pcb dxf手册

简介：
A 2G Power Amplifier Module Utilizing Wideband Doherty Architecture for Mobile Base Stations The RF Power GaN Transistor module, designated as A2G26H281-04S, is engineered to deliver an output power of up to 50 W with a highly efficient operation across asymmetric configurations. Specifically designed for cellular base station applications, this module ensures robust performance over the frequency range spanning from 2496 MHz to 2690 MHz. It operates optimally within this predefined band and is not recommended for use outside its specified operating frequencies due to potential performance degradation in mismatched environments. This part has been developed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. This module is characterized by its performance, which is guaranteed when used within the specified frequency band (2496–2690 MHz). Its application outside this band may not yield reliable results due to potential mismatches in impedance matching. The device operates effectively across a wideband Doherty architecture designed for asymmetric power amplifiers. It provides an output power of 50 W with high efficiency and excellent linearity, making it suitable for mobile base station applications operating at frequencies up to 2600 MHz. A2G26H281-04S