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MT53B256M32D1NP.pdf

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这是一个PDF文档，文件名为MT53B256M32D1NP，可能包含内存模块的技术规格或数据表信息。具体细节需参考文档内容。 Mobile LPDDR4 SDRAM, MT53B256M32D1, MT53B512M32D2, and MT53B1024M32D4 feature: - Ultra-low-voltage core and I/O power supplies: VDD1 ranges from 1.70 to 1.95V with a nominal value of 1.8V; VDD2/VDDQ ranges from 1.06 to 1.17V, with a nominal value of 1.10V. - Frequency range: Support for frequencies between 1600 and 10 MHz (data rate range: 3200–20 Mb/s/pin). - A 16n prefetch DDR architecture. - A two-channel partitioned design to minimize read/write energy consumption and lower average latency. - Eight internal banks per channel for simultaneous operations. - Single-data-rate CMD/ADR entry. - Bidirectional/differential data strobes on each byte lane. - Programmable read (RL) and write (WL) latencies, as well as burst lengths that can be set to 16 or 32 in real-time. - Directed per-bank refresh for concurrent operations and ease of command scheduling. - A maximum throughput of up to 12.8 GB/s per die when using two channels at a rate of 6.4 GB/s each. - An on-chip temperature sensor that manages the self-refresh rate automatically. - Partial-array self refresh (PASR) functionality. - Adjustable output drive strength (DS). - Clock-stop capability to save power during idle periods. - RoHS-compliant, environmentally friendly packaging options available. - Programmable VSSQ (ODT) termination for optimal signal integrity.

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    这是一个PDF文档，文件名为MT53B256M32D1NP，可能包含内存模块的技术规格或数据表信息。具体细节需参考文档内容。 Mobile LPDDR4 SDRAM, MT53B256M32D1, MT53B512M32D2, and MT53B1024M32D4 feature: - Ultra-low-voltage core and I/O power supplies: VDD1 ranges from 1.70 to 1.95V with a nominal value of 1.8V; VDD2/VDDQ ranges from 1.06 to 1.17V, with a nominal value of 1.10V. - Frequency range: Support for frequencies between 1600 and 10 MHz (data rate range: 3200–20 Mb/s/pin). - A 16n prefetch DDR architecture. - A two-channel partitioned design to minimize read/write energy consumption and lower average latency. - Eight internal banks per channel for simultaneous operations. - Single-data-rate CMD/ADR entry. - Bidirectional/differential data strobes on each byte lane. - Programmable read (RL) and write (WL) latencies, as well as burst lengths that can be set to 16 or 32 in real-time. - Directed per-bank refresh for concurrent operations and ease of command scheduling. - A maximum throughput of up to 12.8 GB/s per die when using two channels at a rate of 6.4 GB/s each. - An on-chip temperature sensor that manages the self-refresh rate automatically. - Partial-array self refresh (PASR) functionality. - Adjustable output drive strength (DS). - Clock-stop capability to save power during idle periods. - RoHS-compliant, environmentally friendly packaging options available. - Programmable VSSQ (ODT) termination for optimal signal integrity.